Indium bump fabricated with electroplating method

Author

Huang, Qiuping ; Xu, Gaowei ; Le Luo

Author_Institution

ShangHai Inst. of Microsyst. & InformationTechnology, Chinese Acad. of Sci., Shanghai, China

fYear

2009

fDate

10-13 Aug. 2009

Firstpage

650

Lastpage

654

Abstract

Indium solderbumps are usually used in interconnection between focal plane arrays (FPAs) and Si read out integrated circuits (ROICs) by flip-chip bonding. The fabrication of indium bump array is a critical technology in this process. In this paper, the 16times16 indium bump array was fabricated by electroplating method. The indium bump is 100 mum in pitch and 40 mum in diameter. Lift-off method and IBE process were adopted to try to remove the seed layer. Ti/Pt/Au(200 Aring/300 Aring/800 Aring) by sputtering method and Ti/Pt/Au/ep Au(200 Aring/300 Aring/800 Aring/3-4 mum) by electroplating after sputtering were investigated as UBM (under bump metallization) of indium bump. The reliability of indium bumps with different UBM was evaluated by cross-section analysis and shear test.

Keywords

electroplating; flip-chip devices; focal planes; gold alloys; integrated circuit interconnections; integrated circuit reliability; platinum alloys; readout electronics; solders; sputtering; titanium alloys; TiPtAu; electroplating method; flip-chip bonding; focal plane arrays; indium bump array; indium bump reliability; indium solder bumps; interconnection; silicon read out integrated circuits; sputtering method; under bump metallization; Bonding; Fabrication; Gold; Identity-based encryption; Indium; Integrated circuit interconnections; Integrated circuit technology; Metallization; Sputtering; Testing;

fLanguage

English

Publisher

ieee

Conference_Titel

Electronic Packaging Technology & High Density Packaging, 2009. ICEPT-HDP '09. International Conference on

Conference_Location

Beijing

Print_ISBN

978-1-4244-4658-2

Electronic_ISBN

978-1-4244-4659-9

Type

conf

DOI

10.1109/ICEPT.2009.5270670

Filename

5270670