Improved silver paste allows 19%-efficient c-Si solar cell with homogeneous high-sheet-resistance POCl3 emitter

Author

Lim, Jong-Keun ; Kim, Tae Jun ; Lee, Kyumin ; Seo, Junmo ; Hwang, Myung-Ick ; Lee, Won-jae ; Cho, Eun-Chel

Author_Institution

Green Energy Res. Inst., Hyundai Heavy Ind., Co., Ltd., Yongin, South Korea

fYear

2012

fDate

3-8 June 2012

Abstract

The emitter saturation current density (J_0e) of the industrial p-type c-Si solar cell can be reduced by thinning the n⁺⁺ top layer of the phosphorus emitter. A simple approach to the shallower emitter is to aim for a higher sheet resistance with the POCl₃ diffusion process. We have fabricated high-efficiency solar cells with a homogeneous emitter of 80 Ω/sq sheet resistance, by employing a commercial Ag paste designed for an improved electrical contact to the high-resistance emitter. The average efficiency improves by 0.4%_abs, with the champion cell showing 19.0% efficiency. Industrial 156 mm p-type Cz sc-Si wafers were used.

Keywords

current density; electric resistance; electrical contacts; elemental semiconductors; silicon; silver; solar cells; thermal diffusion; Si-Ag; diffusion process; electrical contact; emitter saturation current density; homogeneous emitter; n++ top layer; p-type c-Si solar cell; phosphorus emitter; shallower emitter; sheet resistance; size 156 mm; thinning; Contacts; Electrical resistance measurement; Photovoltaic cells; Photovoltaic systems; Resistance; Silicon; Ag paste; POCl3 diffusion; emitter saturation current density (J0e); high-efficiency solar cells; high-resistance emitter;

fLanguage

English

Publisher

ieee

Conference_Titel

Photovoltaic Specialists Conference (PVSC), 2012 38th IEEE

Conference_Location

Austin, TX

ISSN

0160-8371

Print_ISBN

978-1-4673-0064-3

Type

conf

DOI

10.1109/PVSC.2012.6318033

Filename

6318033