Title :
A phenomenon of charge trapping saturation induced by rapid thermal annealing
Author :
Huang, M.S. ; Wong, S.C. ; Sun, C.Y. ; Liu, L.M.
Author_Institution :
Dept. of Electron. Eng., Nat. Taiwan Inst. of Technol., Taipei, Taiwan
Abstract :
In this paper, we investigate the impact of Rapid Thermal Annealing temperature on hot electron reliability by using DC stress measurement. We find that the substrate current of sample with Rapid Thermal Annealing temperature higher than 900°C degrades with time, while substrate current of sample with 875°C shows an anomalous variation, that is, two section saturation phenomenon. Our results is also verified with two dimensional device simulation. Finally, we propose a physical explanations about two section saturation phenomenon. We suggest that one should use the samples with Rapid Thermal Annealing temperature higher than 900°C based on the reliability point of view
Keywords :
hot carriers; rapid thermal annealing; semiconductor device reliability; 875 to 900 C; DC stress; charge trapping saturation; hot electron reliability; rapid thermal annealing; substrate current; two dimensional device simulation; Electron traps; Implants; Microelectronics; Phosphors; Power engineering and energy; Rapid thermal annealing; Stress; Sun; Temperature; Thermal degradation;
Conference_Titel :
University/Government/Industry Microelectronics Symposium, 1997., Proceedings of the Twelfth Biennial
Conference_Location :
Rochester, NY
Print_ISBN :
0-7803-3790-5
DOI :
10.1109/UGIM.1997.616703
