A phenomenon of charge trapping saturation induced by rapid thermal annealing

Author

Huang, M.S. ; Wong, S.C. ; Sun, C.Y. ; Liu, L.M.

Author_Institution

Dept. of Electron. Eng., Nat. Taiwan Inst. of Technol., Taipei, Taiwan

fYear

1997

fDate

20-23 Jul 1997

Firstpage

124

Lastpage

127

Abstract

In this paper, we investigate the impact of Rapid Thermal Annealing temperature on hot electron reliability by using DC stress measurement. We find that the substrate current of sample with Rapid Thermal Annealing temperature higher than 900°C degrades with time, while substrate current of sample with 875°C shows an anomalous variation, that is, two section saturation phenomenon. Our results is also verified with two dimensional device simulation. Finally, we propose a physical explanations about two section saturation phenomenon. We suggest that one should use the samples with Rapid Thermal Annealing temperature higher than 900°C based on the reliability point of view

Keywords

hot carriers; rapid thermal annealing; semiconductor device reliability; 875 to 900 C; DC stress; charge trapping saturation; hot electron reliability; rapid thermal annealing; substrate current; two dimensional device simulation; Electron traps; Implants; Microelectronics; Phosphors; Power engineering and energy; Rapid thermal annealing; Stress; Sun; Temperature; Thermal degradation;

fLanguage

English

Publisher

ieee

Conference_Titel

University/Government/Industry Microelectronics Symposium, 1997., Proceedings of the Twelfth Biennial

Conference_Location

Rochester, NY

ISSN

0749-6877

Print_ISBN

0-7803-3790-5

Type

conf

DOI

10.1109/UGIM.1997.616703

Filename

616703