DocumentCode
3520859
Title
Modeling statistical distribution of random telegraph noise magnitude
Author
Sonoda, Ken´ichiro ; Tanizawa, Motoaki ; Ishikawa, Kiyoshi ; Inoue, Yasuo
Author_Institution
Renesas Electron. Corp., Itami, Japan
fYear
2011
fDate
8-10 Sept. 2011
Firstpage
19
Lastpage
22
Abstract
Random telegraph noise (RTN) magnitude of MOSFETs is analyzed using three-dimensional device simulation taking random discrete dopant into account. The maximum RTN magnitude is inversely proportional to the RTN region area in which the surface potential is in the vicinity of its saddle point. The inverse of the maximum RTN magnitude exhibits a normal distribution.
Keywords
MOSFET; semiconductor device noise; surface potential; MOSFET; RTN magnitude; random discrete dopant; random telegraph noise magnitude; saddle point vicinity; statistical distribution modeling; surface potential; three-dimensional device simulation; Analytical models; Electric potential; Impedance; Logic gates; Numerical models; Statistical distributions; Threshold voltage;
fLanguage
English
Publisher
ieee
Conference_Titel
Simulation of Semiconductor Processes and Devices (SISPAD), 2011 International Conference on
Conference_Location
Osaka
ISSN
1946-1569
Print_ISBN
978-1-61284-419-0
Type
conf
DOI
10.1109/SISPAD.2011.6035039
Filename
6035039
Link To Document