Title :
Modeling statistical distribution of random telegraph noise magnitude
Author :
Sonoda, Ken´ichiro ; Tanizawa, Motoaki ; Ishikawa, Kiyoshi ; Inoue, Yasuo
Author_Institution :
Renesas Electron. Corp., Itami, Japan
Abstract :
Random telegraph noise (RTN) magnitude of MOSFETs is analyzed using three-dimensional device simulation taking random discrete dopant into account. The maximum RTN magnitude is inversely proportional to the RTN region area in which the surface potential is in the vicinity of its saddle point. The inverse of the maximum RTN magnitude exhibits a normal distribution.
Keywords :
MOSFET; semiconductor device noise; surface potential; MOSFET; RTN magnitude; random discrete dopant; random telegraph noise magnitude; saddle point vicinity; statistical distribution modeling; surface potential; three-dimensional device simulation; Analytical models; Electric potential; Impedance; Logic gates; Numerical models; Statistical distributions; Threshold voltage;
Conference_Titel :
Simulation of Semiconductor Processes and Devices (SISPAD), 2011 International Conference on
Conference_Location :
Osaka
Print_ISBN :
978-1-61284-419-0
DOI :
10.1109/SISPAD.2011.6035039
