DocumentCode
3520974
Title
Fundamental studies on whisker growth in Sn-based Solders
Author
Zhao, Mengke ; Hao, Hu ; Xu, Guangchen ; Sun, Jia ; Shi, Yaowu ; Guo, Fu
Author_Institution
Coll. of Mater. Sci. & Eng., Beijing Univ. of Technol. Beijing, Beijing, China
fYear
2009
fDate
10-13 Aug. 2009
Firstpage
585
Lastpage
588
Abstract
Sn whisker growth is considered as a crucial reliability issue in the electronic packaging industry, especially with the massive application of Pb-free solder alloys. In this paper, we report our fundamental studies on Sn whisker growth through accelerated tests. Excessive rare earth element addition is one way we employed to investigate the kinetics of whisker growth. Several aspects of the morphological features were characterized and modelled. The growth mechanism was clarified through observing the diffusion path of oxygen atoms to form rare earth oxides. Our attempt to clarify the growth mechanism of the whiskers observed during electromigration test was be presented based on the experimental efforts on the one-dimensional joint specimens. Such mechanism was investigated from a series of comparative experiments to understand whether mass movement from electrical current or internal stresses from Joule heating induced diffusion plays the crucial role to form such whiskers.
Keywords
electromigration; electronics packaging; reliability; solders; tin alloys; whiskers (crystal); 1D joint specimens; Joule heating; SnJkJk; diffusion path; electrical current; electromigration test; electronic packaging industry; excessive rare earth element addition; growth mechanism; internal stresses; morphological features; oxygen atoms; reliability; solder alloys; whisker growth; Atomic measurements; Electromigration; Electronics industry; Electronics packaging; Internal stresses; Kinetic theory; Life estimation; Resistance heating; Testing; Tin;
fLanguage
English
Publisher
ieee
Conference_Titel
Electronic Packaging Technology & High Density Packaging, 2009. ICEPT-HDP '09. International Conference on
Conference_Location
Beijing
Print_ISBN
978-1-4244-4658-2
Electronic_ISBN
978-1-4244-4659-9
Type
conf
DOI
10.1109/ICEPT.2009.5270681
Filename
5270681
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