DocumentCode :
3521047
Title :
Electron-phonon scattering in Si and Ge: From bulk to nanodevices
Author :
Rideau, D. ; Zhang, W. ; Niquet, Y.M. ; Delerue, C. ; Tavernier, C. ; Jaouen, H.
Author_Institution :
STMicroelectron., Crolles, France
fYear :
2011
fDate :
8-10 Sept. 2011
Firstpage :
47
Lastpage :
50
Abstract :
Using a sp3d5s* tight-binding model for the electrons and a valence force field model for the phonons, we investigate the electron-phonon scattering rates in Si and Ge. The bulk Si mobility calculated with this model (μ = 1400 cm2/V/s) and its temperature dependence agree well with experimental data. We are able to analyze the much lower values obtained in Si nanowires where both carriers and phonons are confined.
Keywords :
Brillouin zones; carrier density; electron-phonon interactions; elemental semiconductors; germanium; nanowires; silicon; tight-binding calculations; Brillouin zone; Ge; Si; carrier density; electron-phonon scattering; nanodevices; nanowires; tight-binding model; valence force field model; Computational modeling; Logic gates; Mechanical factors; Silicon;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Simulation of Semiconductor Processes and Devices (SISPAD), 2011 International Conference on
Conference_Location :
Osaka
ISSN :
1946-1569
Print_ISBN :
978-1-61284-419-0
Type :
conf
DOI :
10.1109/SISPAD.2011.6035046
Filename :
6035046
Link To Document :
https://search.ricest.ac.ir/dl/search/defaultta.aspx?DTC=49&DC=3521047
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