DocumentCode
352105
Title
SPICE modeling of the transient response of irradiated MOSFETs
Author
Pouget, V. ; Lapuyade, H. ; Lewis, D. ; Deval, Y. ; Fouillat, P. ; Sarger, L.
Author_Institution
Bordeaux I Univ., Talence, France
fYear
1999
fDate
1999
Firstpage
69
Lastpage
74
Abstract
A new SPICE model of irradiated MOSFET taking into account the real response of the four electrodes is proposed. A comparison between SPICE-generated transient response and PISCES device simulation demonstrates the accuracy benefits when used in complex electronic architectures
Keywords
MOSFET; SPICE; radiation effects; semiconductor device models; transient response; PISCES device simulation; SPICE modeling; complex electronic architectures; irradiated MOSFETs; transient response; Calibration; Circuit simulation; Circuit testing; Computational modeling; Electrodes; MOSFETs; Numerical simulation; Random access memory; SPICE; Transient response;
fLanguage
English
Publisher
ieee
Conference_Titel
Radiation and Its Effects on Components and Systems, 1999. RADECS 99. 1999 Fifth European Conference on
Conference_Location
Fontevraud
Print_ISBN
0-7803-5726-4
Type
conf
DOI
10.1109/RADECS.1999.858548
Filename
858548
Link To Document