Title :
SPICE modeling of the transient response of irradiated MOSFETs
Author :
Pouget, V. ; Lapuyade, H. ; Lewis, D. ; Deval, Y. ; Fouillat, P. ; Sarger, L.
Author_Institution :
Bordeaux I Univ., Talence, France
Abstract :
A new SPICE model of irradiated MOSFET taking into account the real response of the four electrodes is proposed. A comparison between SPICE-generated transient response and PISCES device simulation demonstrates the accuracy benefits when used in complex electronic architectures
Keywords :
MOSFET; SPICE; radiation effects; semiconductor device models; transient response; PISCES device simulation; SPICE modeling; complex electronic architectures; irradiated MOSFETs; transient response; Calibration; Circuit simulation; Circuit testing; Computational modeling; Electrodes; MOSFETs; Numerical simulation; Random access memory; SPICE; Transient response;
Conference_Titel :
Radiation and Its Effects on Components and Systems, 1999. RADECS 99. 1999 Fifth European Conference on
Conference_Location :
Fontevraud
Print_ISBN :
0-7803-5726-4
DOI :
10.1109/RADECS.1999.858548
