Title :
Heavy ions induced latent stuck bits revealed by total dose irradiation in 4T cells SRAMs
Author :
David, J.P. ; Loquet, J.G. ; Duzellier, S.
Author_Institution :
ONERA-CERT, Toulouse, France
Abstract :
Many stuck bits have been observed in 4T cells SRAMs exposed to heavy ions and total dose irradiations. This phenomenon, attributed to local dose deposition, is modeled accounting charge generation, recombination, transport and trapping in view of being better understood
Keywords :
SRAM chips; ion beam effects; semiconductor device models; 4T cells SRAMs; charge generation; heavy ions induced latent stuck bits; local dose deposition; recombination; total dose irradiation; transport; trapping; Character generation; Circuits; Cosmic rays; Extraterrestrial phenomena; MOS devices; MOSFETs; Niobium; Random access memory; Space charge; Very large scale integration;
Conference_Titel :
Radiation and Its Effects on Components and Systems, 1999. RADECS 99. 1999 Fifth European Conference on
Conference_Location :
Fontevraud
Print_ISBN :
0-7803-5726-4
DOI :
10.1109/RADECS.1999.858550
