Title :
Study of current induced magnetic domain wall movement with extremely low energy consumption by micromagnetic simulation
Author :
Kawabata, K. ; Tanizawa, M. ; Ishikawa, K. ; Inoue, Y. ; Inuishi, M. ; Nishimura, T.
Author_Institution :
Renesas Electron. Corp., Itami, Japan
Abstract :
We study the velocity and energy consumption of current induced magnetic domain wall (DW) movement, which is a new paradigm in spintronics devices such as a next generation MRAM and race track memory, by LLG (Landau-Lifshitz-Gilbert) micromagnetic simulation. It is found that DW velocity is almost the same in current in magnetic thin film plane(CIP) and current perpendicular to plane (CPP-Perp.). On the other hand, the energy consumption is much lower in CPP-Perp. than CIP. These results show that the CPP-Perp. structure has potential solutions for high speed and low energy consumption applications.
Keywords :
MRAM devices; energy consumption; magnetic domain walls; magnetic thin films; magnetoelectronics; micromagnetics; Landau-Lifshitz-Gilbert micromagnetic simulation; MRAM; current induced magnetic domain wall movement; energy consumption; magnetic thin film plane; race track memory; spintronics devices; Energy consumption; Magnetic domain walls; Magnetic fields; Magnetic tunneling; Magnetization; Resistance; Torque; MRAM; domain wall movement; spin transfer torque;
Conference_Titel :
Simulation of Semiconductor Processes and Devices (SISPAD), 2011 International Conference on
Conference_Location :
Osaka
Print_ISBN :
978-1-61284-419-0
DOI :
10.1109/SISPAD.2011.6035048
