• DocumentCode
    3521101
  • Title

    Coupling the level set method with an electrothermal solver to simulate GST based PCM cells

  • Author

    Glière, A. ; Cueto, O. ; Hazart, J.

  • Author_Institution
    LETI, CEA, Grenoble, France
  • fYear
    2011
  • fDate
    8-10 Sept. 2011
  • Firstpage
    63
  • Lastpage
    66
  • Abstract
    The Level Set Method and a GST thermodynamic model are coupled to an electrothermal solver to simulate GST based PCM cells. A good qualitative agreement with published results is obtained in the cell amorphization simulation and the ability of our method to simulate crystallization is demonstrated.
  • Keywords
    amorphisation; antimony compounds; crystallisation; germanium compounds; phase change memories; thermodynamics; GST based PCM cell simulation; GST thermodynamic; Ge2Sb2Te5; cell amorphization simulation; crystallization simulation; electrothermal solver; level set coupling method; qualitative agreement; Conductivity; Crystals; Level set; Mathematical model; Phase change materials; Switches; Crystallization; Level Set Method; PCM Simulation;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Simulation of Semiconductor Processes and Devices (SISPAD), 2011 International Conference on
  • Conference_Location
    Osaka
  • ISSN
    1946-1569
  • Print_ISBN
    978-1-61284-419-0
  • Type

    conf

  • DOI
    10.1109/SISPAD.2011.6035050
  • Filename
    6035050
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=3521101