DocumentCode :
352111
Title :
Response of MOSFETs from DMILL technology to high total dose levels
Author :
Armani, J.M. ; Brisset, C. ; Joffre, F. ; Dentan, M.
Author_Institution :
LETI, CEA, Centre d´´Etudes Nucleaires de Saclay, Gif-sur-Yvette, France
fYear :
1999
fDate :
1999
Firstpage :
279
Lastpage :
284
Abstract :
We have investigated the response of MOS transistors fabricated using the DMILL process and irradiated to a total dose of 1MGy(Si)1 with a 60Co source. Results show that parameter shifts remain limited, thus authorizing use of this technology in environments involving very high levels of radiation
Keywords :
MOSFET; SIMOX; electron traps; gamma-ray effects; 1 MGy; DMILL technology; MOSFET; SIMOX; gamma radiation tolerance; total dose levels; trap density; Accidents; Coolants; Electronics industry; Fuel processing industries; Inductors; MOS devices; MOSFETs; Silicon on insulator technology; Testing; Voltage;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Radiation and Its Effects on Components and Systems, 1999. RADECS 99. 1999 Fifth European Conference on
Conference_Location :
Fontevraud
Print_ISBN :
0-7803-5726-4
Type :
conf
DOI :
10.1109/RADECS.1999.858595
Filename :
858595
Link To Document :
https://search.ricest.ac.ir/dl/search/defaultta.aspx?DTC=49&DC=352111
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