Title :
Impact of technology scaling in SOI back-channel total dose tolerance, a 2-D numerical study using self-consistent oxide code
Author :
Leray, Jean-Luc ; Paillet, Philippe ; Ferlet-Cavrois, Véronique ; Tavernier, Clément ; Belhaddad, Khader ; Penzin, Oleg
Author_Institution :
CEA, Centre d´´Etudes de Bruyeres-le-Chatel, France
Abstract :
A new 2D-self-consistent code has been developed and is applied to the understanding of charge trapping in SOI buried oxides and its effect on back-channel MOS leakage in SOI transistors. 2D effects, field-collapse and field-enhancement are observed. Clear indications on scaling trends are obtained with respect to supply voltage and oxide thickness. In thinner oxides, 2D effects are observed for example, the onset of back-channel leakage current is found to be related to the ratio of the channel length on the oxide thickness
Keywords :
MOSFET; buried layers; electron traps; leakage currents; radiation hardening (electronics); semiconductor device models; silicon-on-insulator; 2-D numerical study; 2D-self-consistent code; SOI back-channel total dose tolerance; SOI buried oxides; SOI transistors; Si-SiO2; back-channel MOS leakage; back-channel leakage current; channel length; charge trapping; field-collapse; field-enhancement; oxide thickness; self-consistent oxide code; supply voltage; technology scaling; CMOS technology; Electron traps; Equations; Fabrication; Integrated circuit technology; Leakage current; Low voltage; Silicon; Systems engineering and theory; Two dimensional displays;
Conference_Titel :
Radiation and Its Effects on Components and Systems, 1999. RADECS 99. 1999 Fifth European Conference on
Conference_Location :
Fontevraud
Print_ISBN :
0-7803-5726-4
DOI :
10.1109/RADECS.1999.858602
