Title :
Tight-binding study of Γ-L bandstructure engineering for ballistic III–V nMOSFETs
Author :
Yuan, Ze ; Nainani, Aneesh ; Guan, Ximeng ; Wong, H. -S Philip ; Saraswat, Krishna C.
Author_Institution :
Dept. of Electr. Eng., Stanford Univ., Stanford, CA, USA
Abstract :
A major concern for III-V nMOSFETs is the degradation of ION due to low density of states and spillover of the charge from high-mobility Γ-valley to low-mobility L-valley at high sheet charge density. In this paper, we study these Γ-L bandstructure effects for ultrathin-body InxGa1-xSb nMOSFETs with varying stoichiometry using tight-binding and ballistic transport model.
Keywords :
III-V semiconductors; MOSFET; carrier mobility; gallium compounds; indium compounds; semiconductor device models; thin film transistors; Γ-L bandstructure effect; InxGa1-xSb; ballistic III-V nMOSFET; ballistic transport model; charge spillover; density of states; high-mobility Γ-valley; low-mobility L-valley; stoichiometry; tight-binding model; ultrathin-body nMOSFET; Ballistic transport; Compounds; Effective mass; Logic gates; MOSFETs; Materials; Photonic band gap; InGaSb; ballistic transport; tight-binding; ultra-thin body;
Conference_Titel :
Simulation of Semiconductor Processes and Devices (SISPAD), 2011 International Conference on
Conference_Location :
Osaka
Print_ISBN :
978-1-61284-419-0
DOI :
10.1109/SISPAD.2011.6035052
