Title :
Use of commercial VDMOSFETs in electronic systems subjected to radiation
Author :
Picard, C. ; Brisset, C. ; Quittard, O. ; Marceau, M. ; Hoffmann, A. ; Joffre, F. ; Charles, J.-P.
Author_Institution :
LETI, CEA, Centre d´´Etudes Nucleaires de Saclay, Gif-sur-Yvette, France
Abstract :
This study explores the effectiveness of pre-irradiation as a hardening technique for COTS components used in electronic power systems. This technique greatly improves the radiation tolerance of VDMOSFETs in such systems, whereby a small change in Rdson is observed
Keywords :
power MOSFET; radiation hardening (electronics); COTS components; commercial VDMOSFETs; electronic power systems; electronic systems; hardening technique; pre-irradiation; radiation; radiation tolerance; Fabrication; IEEE members; Industrial power systems; Leakage current; MOS devices; MOSFETs; Nuclear electronics; Radiation hardening; Testing; Threshold voltage;
Conference_Titel :
Radiation and Its Effects on Components and Systems, 1999. RADECS 99. 1999 Fifth European Conference on
Conference_Location :
Fontevraud
Print_ISBN :
0-7803-5726-4
DOI :
10.1109/RADECS.1999.858604
