A wigner function-based determinist method for the simulation of quantum transport in silicon nanowire transistors

Author

Barraud, Sylvain ; Poiroux, Thierry ; Faynot, Olivier

Author_Institution

Leti, CEA, Grenoble, France

fYear

2011

fDate

8-10 Sept. 2011

Firstpage

75

Lastpage

78

Abstract

We present a model of quantum transport for Si nanowire transistor that makes use of the Wigner function formalism and takes into account carrier scattering. Scattering effects on current-voltage (I-V) characteristics are assessed using both the relaxation time approximation and the Boltzmann collision operator. Within the Fermi golden rule approximation, the standard collision term is described for both acoustic phonon and surface-roughness interactions. Then, the model is applied to study the impact of each scattering mechanism on short-channel electrical performance of Si nanowire transistors for different gate lengths.

Keywords

carrier relaxation time; elemental semiconductors; nanowires; silicon; surface roughness; surface scattering; transistors; Boltzmann collision operator; Fermi golden rule approximation; I-V characteristics; Si; Wigner function formalism; Wigner function-based determinist method; acoustic phonon interaction; carrier scattering; current-voltage characteristics; gate length; nanowire transistor; quantum transport simulation; relaxation time approximation; short-channel electrical performance; surface-roughness interaction; Approximation methods; Logic gates; Rough surfaces; Scattering; Silicon; Strontium; Surface roughness;

fLanguage

English

Publisher

ieee

Conference_Titel

Simulation of Semiconductor Processes and Devices (SISPAD), 2011 International Conference on

Conference_Location

Osaka

ISSN

1946-1569

Print_ISBN

978-1-61284-419-0

Type

conf

DOI

10.1109/SISPAD.2011.6035053

Filename

6035053