Title :
Radiation hardening of power MOSFETs using electrical stress
Author :
Picard, C. ; Brisset, C. ; Quittard, O. ; Hoffmann, A. ; Joffre, F. ; Charles, J.-P.
Author_Institution :
LETI, CEA, Centre d´´Etudes Nucleaires de Saclay, Gif-sur-Yvette, France
Abstract :
Application of high voltage electrical stresses to NVDMOSFET-type COTS transistors was explored as an original hardening option. Such pre-irradiation treatment enhances transistor response to total dose
Keywords :
high field effects; power MOSFET; radiation hardening (electronics); NVDMOSFET-type COTS transistors; electrical stress; high voltage electrical stresses; power MOSFETs; pre-irradiation treatment; radiation hardening; total dose; transistor response; Electron traps; Electronic components; Gamma rays; IEEE members; Interface states; MOSFET circuits; Power industry; Radiation hardening; Stress; Threshold voltage;
Conference_Titel :
Radiation and Its Effects on Components and Systems, 1999. RADECS 99. 1999 Fifth European Conference on
Conference_Location :
Fontevraud
Print_ISBN :
0-7803-5726-4
DOI :
10.1109/RADECS.1999.858609
