• DocumentCode
    3521182
  • Title

    Effect of bonding and aging temperatures on bond strengths of Cu with 75Sn25In solders

  • Author

    Sasangka, W.A. ; Gan, C.L. ; Thompson, C.V. ; Choi, W.K. ; Wei, J.

  • Author_Institution
    Adv. Mater. for Micro- & Nano-Syst., Singapore-MIT Alliance, Singapore, Singapore
  • fYear
    2009
  • fDate
    9-11 Dec. 2009
  • Firstpage
    336
  • Lastpage
    341
  • Abstract
    In the present study, the interaction between thin film Cu and non-eutectic Sn-In is studied. The effects of the bonding and aging temperature on microstructure, IMC formation and also shear strength are investigated by SEM/EDX, XRD and shear testing. The bonding mechanism is proposed based on the obtained results. The bonding mechanism is proposed to occur over 2 stages: (1) An increase in bonding temperatures leads to an increase in the true contact area, and (2) The aging temperature leads to interdiffusion and assists formation of the IMC. The type of IMC that forms is ¿ phase (Cu6(Sn, In)5) which is similar to the interaction between Cu and eutectic Sn-In. The shear strength increases with increasing the bonding temperature. On the other hand, the aging temperature does not have a significant impact on the shear strength. This indicates that the shear strength is mostly affected by the true contact area rather than the IMC formation.
  • Keywords
    ageing; bonding processes; copper; electronics packaging; shear strength; solders; tin alloys; 75Sn25In solder; EDX; IMC formation; SEM; Sn-In; XRD; aging temperature; bond strength; bonding temperature; interdiffusion; microstructure; noneutectic Sn-In; shear strength; shear testing; thin film copper; Aging; Bonding; Materials science and technology; Microelectronics; Microstructure; Plasma temperature; Temperature sensors; Testing; Transistors; X-ray scattering;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Electronics Packaging Technology Conference, 2009. EPTC '09. 11th
  • Conference_Location
    Singapore
  • Print_ISBN
    978-1-4244-5099-2
  • Electronic_ISBN
    978-1-4244-5100-5
  • Type

    conf

  • DOI
    10.1109/EPTC.2009.5416527
  • Filename
    5416527