Impact of channel shape on carrier transport investigated by ensemble monte carlo/molecular dynamics simulation

Author

Kamioka, T. ; Imai, H. ; Watanabe, T. ; Ohmori, K. ; Shiraishi, K. ; Kamakura, Y.

Author_Institution

Fac. of Sci. & Eng., Waseda Univ., Tokyo, Japan

fYear

2011

fDate

8-10 Sept. 2011

Firstpage

83

Lastpage

86

Abstract

Effect of the channel shape on the nano-scale carrier transport is studied by using the ensemble Monte-Carlo - molecular dynamics method (EMC/MD). Carrier transport in hone-shaped asymmetric channels which widen from source to drain sides is simulated by comparing that in the conventional straight channels. The obtained conductance of the horn-shaped channels is larger than that of the straight channel, as a result of the enhancement of the carrier mobility in the hone-shaped channel. This can be attributed to two reasons: the collimation effect of the asymmetric channel peculiar in the quasi-ballistic carrier transport regime, and the suppression of carrier-carrier interaction due to widening of the channel.

Keywords

Monte Carlo methods; ballistic transport; carrier mobility; elemental semiconductors; molecular dynamics method; nanostructured materials; silicon; Si; carrier mobility; carrier-carrier interaction; electrical conductivity; ensemble Monte Carlo-molecular dynamics simulation; hone-shaped asymmetric channels; horn-shaped channel; nanoscale carrier transport; quasiballistic carrier transport; Effective mass; Electric potential; Electromagnetic compatibility; Fluctuations; Scattering; Shape; Silicon; EMC-MD method; MOSFET; assymetric channel; ballistic transport; collimation effect;

fLanguage

English

Publisher

ieee

Conference_Titel

Simulation of Semiconductor Processes and Devices (SISPAD), 2011 International Conference on

Conference_Location

Osaka

ISSN

1946-1569

Print_ISBN

978-1-61284-419-0

Type

conf

DOI

10.1109/SISPAD.2011.6035055

Filename

6035055