Title :
Ageing tests of radiation damaged lasers and photodiodes for the CMS experiment at CERN
Author :
Gill, K. ; Azevedo, C. ; Batten, J. ; Cervelli, G. ; Grabit, R. ; Jensen, F. ; Troska, Jan ; Vasey, F.
Author_Institution :
EP Div., CERN, Geneva, Switzerland
Abstract :
The effects of thermally accelerated ageing in irradiated and unirradiated 1310 nm InGaAsP edge-emitting lasers and InGaAs p-i-n photodiodes are presented. 40 lasers (20 irradiated) and 30 photodiodes (19 irradiated) were aged for 4000 hours at 80°C. Periodic measurements were made of laser threshold and efficiency, and p-i-n leakage current and photocurrent. There were no sudden failures and there was very little wearout related degradation in either unirradiated or irradiated sample groups. The results suggest that the tested devices have a sufficiently long lifetime to operate for at least 10 years inside the Compact Muon Solenoid experiment despite being exposed to a harsh radiation environment
Keywords :
III-V semiconductors; ageing; gallium arsenide; indium compounds; p-i-n photodiodes; radiation effects; semiconductor lasers; 1310 nm; 4000 h; 80 C; CERN; CMS experiment; Compact Muon Solenoid experiment; InGaAs; InGaAs p-i-n photodiodes; InGaAsP; InGaAsP edge-emitting lasers; ageing tests; efficiency; laser threshold; p-i-n leakage current; photocurrent; photodiodes; radiation damaged lasers; wearout related degradation; Accelerated aging; Current measurement; Degradation; Indium gallium arsenide; Leakage current; Life testing; Mesons; PIN photodiodes; Photoconductivity; Solenoids;
Conference_Titel :
Radiation and Its Effects on Components and Systems, 1999. RADECS 99. 1999 Fifth European Conference on
Conference_Location :
Fontevraud
Print_ISBN :
0-7803-5726-4
DOI :
10.1109/RADECS.1999.858620
