Characterization of ionizing radiation effects in MOS structures by bipolar operation study

Author

Bakhtiar, H. ; Picard, C. ; Brisset, C. ; Hoffmann, A. ; Mialhe, P. ; Charles, J.-P.

Author_Institution

Dept. of Phys., Univ. Teknologi Malaysia, Johor, Malaysia

fYear

1999

fDate

1999

Firstpage

548

Lastpage

553

Abstract

This work presents a method to characterize transistors of submicron dimensions. The study of the substrate-drain junction of transistors before and after irradiation shows that irradiation induces junction electrical parameters changes due to surface potential action on the space-charge region. Variations of the current gain of the bipolar transistor (drain-substrate-source as emitter-base-collector) for different gate voltages are analyzed and compared to dose effects on the oxide

Keywords

MIS structures; MOSFET; equivalent circuits; radiation effects; semiconductor device models; space charge; LDD n-MOSFETs; MOS structures; bipolar operation study; current gain variations; device irradiation; dose effects; gate oxide; gate voltages; ionizing radiation effects; junction electrical parameters changes; radiation effects characterization; space-charge region; submicron dimensions; substrate-drain junction; surface potential action; BiCMOS integrated circuits; Bipolar transistors; Degradation; Doping; Ionizing radiation; MOSFET circuits; Physics; Space charge; Stress; Voltage;

fLanguage

English

Publisher

ieee

Conference_Titel

Radiation and Its Effects on Components and Systems, 1999. RADECS 99. 1999 Fifth European Conference on

Conference_Location

Fontevraud

Print_ISBN

0-7803-5726-4

Type

conf

DOI

10.1109/RADECS.1999.858644

Filename

858644