Title :
Characterization of ionizing radiation effects in MOS structures by bipolar operation study
Author :
Bakhtiar, H. ; Picard, C. ; Brisset, C. ; Hoffmann, A. ; Mialhe, P. ; Charles, J.-P.
Author_Institution :
Dept. of Phys., Univ. Teknologi Malaysia, Johor, Malaysia
Abstract :
This work presents a method to characterize transistors of submicron dimensions. The study of the substrate-drain junction of transistors before and after irradiation shows that irradiation induces junction electrical parameters changes due to surface potential action on the space-charge region. Variations of the current gain of the bipolar transistor (drain-substrate-source as emitter-base-collector) for different gate voltages are analyzed and compared to dose effects on the oxide
Keywords :
MIS structures; MOSFET; equivalent circuits; radiation effects; semiconductor device models; space charge; LDD n-MOSFETs; MOS structures; bipolar operation study; current gain variations; device irradiation; dose effects; gate oxide; gate voltages; ionizing radiation effects; junction electrical parameters changes; radiation effects characterization; space-charge region; submicron dimensions; substrate-drain junction; surface potential action; BiCMOS integrated circuits; Bipolar transistors; Degradation; Doping; Ionizing radiation; MOSFET circuits; Physics; Space charge; Stress; Voltage;
Conference_Titel :
Radiation and Its Effects on Components and Systems, 1999. RADECS 99. 1999 Fifth European Conference on
Conference_Location :
Fontevraud
Print_ISBN :
0-7803-5726-4
DOI :
10.1109/RADECS.1999.858644
