DocumentCode :
3521262
Title :
Polysilicon interconnections (FEOL): Fabrication and characterization
Author :
Agarwal, Ajay ; Murthy, Ramana B. ; Lee, Vincent ; Viswanadam, Gautham
Author_Institution :
Inst. of Microelectron., A*STAR (Agency for Sci., Technol. & Res.), Singapore, Singapore
fYear :
2009
fDate :
9-11 Dec. 2009
Firstpage :
317
Lastpage :
320
Abstract :
Three dimensional silicon integration technologies are gaining considerable attention as the traditional CMOS scaling becoming more challenging and less beneficial. The advanced packaging solutions based on thin silicon carrier are being developed to interconnect integrated circuits and other devices at high densities. A key enabling technology element of the silicon carrier is through silicon via (TSV), which can provide vertical interconnects in stacked ICs. In this paper, we present vias-first process to realize vertical interconnects that is fully FEOL compatible. The vias are filled by doped polysilicon and wafers with such pre-fabricated vias can be used as the starting wafers for any CMOS device processing. The process details and their characterization are elaborated along with the physical and electrical analysis of such vias.
Keywords :
CMOS integrated circuits; elemental semiconductors; integrated circuit interconnections; integrated circuit packaging; semiconductor doping; thin film circuits; three-dimensional integrated circuits; CMOS device processing; CMOS scaling; advanced packaging; doped polysilicon; electrical analysis; fabrication; integrated circuit interconnections; physical analysis; polysilicon interconnections; silicon integration; thin silicon carrier; through silicon via; CMOS technology; Etching; Fabrication; Insulation; Integrated circuit interconnections; Integrated circuit technology; Lithography; Packaging; Silicon; Through-silicon vias;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Electronics Packaging Technology Conference, 2009. EPTC '09. 11th
Conference_Location :
Singapore
Print_ISBN :
978-1-4244-5099-2
Electronic_ISBN :
978-1-4244-5100-5
Type :
conf
DOI :
10.1109/EPTC.2009.5416531
Filename :
5416531
Link To Document :
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