Title :
Impact of quantum confinement on stress induced nMOSFET threshold voltage shift
Author :
Takashino, H. ; Tanizawa, M. ; Okagaki, T. ; Hayashi, T. ; Taya, M. ; Ishida, H. ; Ishikawa, K. ; Inoue, Y.
Author_Institution :
Renesas Electron. Corp., Itami, Japan
Abstract :
In this paper, we propose a comprehensive model to express nMOSFET threshold voltage shift induced by the stress, ranging from high tensile one to high compressive one. Using this model, the quantum confinement effect is shown to play an important role to cause the threshold voltage shift as large as about 80mV induced by high-film-stress CESL.
Keywords :
MOSFET; semiconductor device models; stress analysis; high-film-stress CESL; quantum confinement effect; stress induced nMOSFET threshold voltage shift; Compressive stress; Impurities; MOSFET circuits; Silicon; Strain; Threshold voltage;
Conference_Titel :
Simulation of Semiconductor Processes and Devices (SISPAD), 2011 International Conference on
Conference_Location :
Osaka
Print_ISBN :
978-1-61284-419-0
DOI :
10.1109/SISPAD.2011.6035061
