Title :
Thermoelectromechanical simulation of GaN HEMTs
Author :
Ancona, M.G. ; Binari, S.C.
Author_Institution :
Naval Res. Lab., Washington, DC, USA
Abstract :
As a tool for studying the critical issue of reliability in GaN HEMTs we develop a multi-dimensional device simulator based on a continuum formulation in which the electrical, mechanical, thermal and transport variables are fully coupled. The new simulator is illustrated with various examples involving HEMT operation and failure.
Keywords :
III-V semiconductors; gallium compounds; high electron mobility transistors; semiconductor device reliability; wide band gap semiconductors; GaN; HEMT; continuum formulation; electrical variable; mechanical variable; multidimensional device simulator; reliability; thermal variable; thermoelectromechanical simulation; transport variable; Aluminum gallium nitride; Gallium nitride; HEMTs; MODFETs; Mathematical model; Strain; Stress; GaN HEMTs; diffusion-drift; failure mechanisms; multi-dimensional simulation; piezoelectric; reliability; thermal expansion; thermoelectroelastic;
Conference_Titel :
Simulation of Semiconductor Processes and Devices (SISPAD), 2011 International Conference on
Conference_Location :
Osaka
Print_ISBN :
978-1-61284-419-0
DOI :
10.1109/SISPAD.2011.6035062
