Density functional theory based simulation of carrier transport in silicon carbide and silicon carbide-silicon dioxide interfaces

We present density functional theory based calculations of band structure and density of states curves for bulk silicon carbide (SiC) and possible silicon carbide-silicon dioxide (SiC-SiO₂) interfaces. We then show carrier transport calculations in these structures using Monte Carlo techniques. This is for understanding the origins of the bandgap traps arising from the SiC-SiO₂ interface, which are of relatively high concentration in SiC MOSFETs compared to those in Si MOSFETs. It is also for investigating the effects of different atomic configurations on channel mobility, on-resistance, and thus losses in SiC power MOSFETs that are used as low-loss switching devices in high power high temperature applications.