Secondary generated holes as a crucial component for modeling of HC degradation in high-voltage n-MOSFET

We propose a physics-based model for hot-carrier degradation (HCD), which is able to represent HCD observed in n-channel high-voltage MOSFETs with different channel length with a single set of physical parameters. Our approach considers not only damage produced by channel electrons but also by secondary generated channel holes. Although the contribution of the holes to the total defect creation is smaller compared to that of electrons, their impact on the linear drain current is comparable with the electronic one. The reason behind this trend is that hole-induced traps are shifted towards the source, thereby more severely affecting the device behavior.