DocumentCode
3521365
Title
Nano resonator simulation fabrication and packaging consideration
Author
Zhang, Wei ; Liu, Zewen ; Wang, Zheng
Author_Institution
Inst. of Microelectron., Tsinghua Univ. Beijing, Beijing, China
fYear
2009
fDate
10-13 Aug. 2009
Firstpage
508
Lastpage
511
Abstract
A study on simulation, fabrication and packaging of metallic nano resonator is presented. The nano resonator is modeled with an equivalent circuit and simulated using HSPICE. CMOS compatible process is used to fabricate the nano resonator with a minimum modification The suspended part of the device is released using HF vapor-phase etching. Packaging of nanoscale device is conceived based on the features, fabrication process and the application of the nano resonator.
Keywords
equivalent circuits; nanoelectromechanical devices; nanofabrication; resonators; semiconductor device packaging; sputter etching; CMOS compatible process; HF vapor-phase etching; HSPICE; equivalent circuit; metallic nano resonator simulation fabrication; nanofabrication process; nanoscale device packaging; Circuit simulation; Dielectric materials; Fabrication; Nanoelectromechanical systems; Nanoscale devices; Packaging; RLC circuits; Resonant frequency; Semiconductor materials; Temperature sensors;
fLanguage
English
Publisher
ieee
Conference_Titel
Electronic Packaging Technology & High Density Packaging, 2009. ICEPT-HDP '09. International Conference on
Conference_Location
Beijing
Print_ISBN
978-1-4244-4658-2
Electronic_ISBN
978-1-4244-4659-9
Type
conf
DOI
10.1109/ICEPT.2009.5270700
Filename
5270700
Link To Document