Title :
Semiconductor material process with UV laser irradiation
Author :
Cheng-Yen Chen ; Chung-Yen Chao ; Zong-Kwei Wu ; Chee-Wee Liu ; Yang, C.C. ; Yih Chang
Author_Institution :
Coll. of Electr. Eng., Nat. Taiwan Univ., Taipei, Taiwan
Abstract :
Summary form only given. We present our results of using UV laser for processing silicon and GaAs. The laser source is the fourth harmonic (266 nm) of a Q-switched Nd:YAG laser. This laser source is highly coherent so that interference fringes can be easily formed. We have used a prism to form interference fringes for directly ablating gratings on the surface of silicon, GaAs, GaN, and LiNbO/sub 3/. Such gratings can find many applications such as laser-cavity feedback and temperature sensing. We discuss the responses of these materials to the laser irradiation.
Keywords :
III-V semiconductors; diffraction gratings; elemental semiconductors; gallium arsenide; gallium compounds; laser ablation; lithium compounds; optical fabrication; silicon; wide band gap semiconductors; 266 nm; GaAs; GaN; LiNbO/sub 3/; Q-switched Nd:YAG laser; Si; UV laser irradiation; YAG:Nd; YAl5O12:Nd; directly ablating gratings; fourth harmonic; interference fringe; laser ablation; laser-cavity feedback; semiconductor material processing; temperature sensing; Gallium arsenide; Gallium nitride; Gratings; Interference; Laser applications; Laser feedback; Semiconductor lasers; Semiconductor materials; Silicon; Temperature sensors;
Conference_Titel :
Lasers and Electro-Optics, 1998. CLEO 98. Technical Digest. Summaries of papers presented at the Conference on
Conference_Location :
San Francisco, CA, USA
Print_ISBN :
1-55752-339-0
DOI :
10.1109/CLEO.1998.675988
