Title :
Low-temperature bonding of laser diode chips on Si substrates with oxygen and hydrogen atmospheric-pressure plasma activation
Author :
Takigawa, Ryo ; Higurashi, Eiji ; Suga, Tadatomo ; Sawada, Renshi
Author_Institution :
Dept. of Precision Eng., Univ. of Tokyo, Tokyo, Japan
Abstract :
Surface activated bonding (SAB) method with atmospheric-pressure plasma treatment is an effective approach to develop low cost, low damage, and low temperature bonding technology. In this research, not only conventional low-pressure plasma treatment (Ar RF plasma) but also atmospheric-pressure plasma treatment (Ar+O2, Ar+H2) was investigated for low-temperature Au-Au surface-activated bonding (150degC). In the case of Au thin film to Au thin film bonding, enough bonding strength was not obtained with Ar+O2 atmospheric-pressure plasma treatment due to Au2O3 formed on Au surface. However, by using Au microbump (diameter at the top: 5 mum, height: 2 mum, and pitch: 10 mum), strong bonding strength was obtained with all these plasmas. Semiconductor laser diodes chips were successfully bonded to Si substrates wiht Au microbumps at low temperature (150degC) in ambient air using Ar+H2 atmospheric-pressure plasma treatment.
Keywords :
bonding processes; gold; integrated optics; plasma materials processing; semiconductor lasers; surface treatment; Au; Si; gold microbump; hydrogen atmospheric-pressure plasma activation; low-temperature bonding technology; oxygen atmospheric-pressure plasma activation; semiconductor laser diode chips; silicon substrates; size 2 mum; size 5 mum; surface activated bonding method; temperature 150 C; Atmospheric-pressure plasmas; Bonding; Costs; Diode lasers; Gold; Hydrogen; Plasma temperature; Substrates; Surface treatment; Transistors;
Conference_Titel :
Electronic Packaging Technology & High Density Packaging, 2009. ICEPT-HDP '09. International Conference on
Conference_Location :
Beijing
Print_ISBN :
978-1-4244-4658-2
Electronic_ISBN :
978-1-4244-4659-9
DOI :
10.1109/ICEPT.2009.5270708
