Low-temperature bonding of laser diode chips on Si substrates with oxygen and hydrogen atmospheric-pressure plasma activation

Author

Takigawa, Ryo ; Higurashi, Eiji ; Suga, Tadatomo ; Sawada, Renshi

Author_Institution

Dept. of Precision Eng., Univ. of Tokyo, Tokyo, Japan

fYear

2009

fDate

10-13 Aug. 2009

Firstpage

475

Lastpage

477

Abstract

Surface activated bonding (SAB) method with atmospheric-pressure plasma treatment is an effective approach to develop low cost, low damage, and low temperature bonding technology. In this research, not only conventional low-pressure plasma treatment (Ar RF plasma) but also atmospheric-pressure plasma treatment (Ar+O₂, Ar+H₂) was investigated for low-temperature Au-Au surface-activated bonding (150degC). In the case of Au thin film to Au thin film bonding, enough bonding strength was not obtained with Ar+O₂ atmospheric-pressure plasma treatment due to Au₂O₃ formed on Au surface. However, by using Au microbump (diameter at the top: 5 mum, height: 2 mum, and pitch: 10 mum), strong bonding strength was obtained with all these plasmas. Semiconductor laser diodes chips were successfully bonded to Si substrates wiht Au microbumps at low temperature (150degC) in ambient air using Ar+H₂ atmospheric-pressure plasma treatment.

Keywords

bonding processes; gold; integrated optics; plasma materials processing; semiconductor lasers; surface treatment; Au; Si; gold microbump; hydrogen atmospheric-pressure plasma activation; low-temperature bonding technology; oxygen atmospheric-pressure plasma activation; semiconductor laser diode chips; silicon substrates; size 2 mum; size 5 mum; surface activated bonding method; temperature 150 C; Atmospheric-pressure plasmas; Bonding; Costs; Diode lasers; Gold; Hydrogen; Plasma temperature; Substrates; Surface treatment; Transistors;

fLanguage

English

Publisher

ieee

Conference_Titel

Electronic Packaging Technology & High Density Packaging, 2009. ICEPT-HDP '09. International Conference on

Conference_Location

Beijing

Print_ISBN

978-1-4244-4658-2

Electronic_ISBN

978-1-4244-4659-9

Type

conf

DOI

10.1109/ICEPT.2009.5270708

Filename

5270708