• DocumentCode
    3521517
  • Title

    Emerging lead-free, high-temperature die-attach technology enabled by low-temperature sintering of nanoscale silver pastes

  • Author

    Lu, Guo-Quan ; Zhao, Meihua ; Lei, Guangyin ; Calata, Jesus N. ; Chen, Xu ; Luo, Susan

  • Author_Institution
    Dept. of MSE & ECE, Virginia Tech, Blacksburg, VA, USA
  • fYear
    2009
  • fDate
    10-13 Aug. 2009
  • Firstpage
    461
  • Lastpage
    466
  • Abstract
    A low-temperature joining technology based on silver sintering, which is being implemented in manufacturing of power electronics modules, holds the promise of achieving 5times higher temperature cycling capability, 3times better total module resistance, and chip junction temperature up to 175degC. Because of its RoHS compliance, the technology is also aggressively pursued by the makers of automotive power electronics components. However, a serious drawback of the technology is the use of high quasi-static pressure (> 40 MPa or 400 kg-force per cm2 chip area) necessary to lower the sintering temperature of existing thick-film silver pastes to less than 300degC. In this paper, we describe the die-attach application of a nanoscale silver paste that can be sintered at low temperature without pressure. Mechanical, thermal, and thermo-mechanical properties of the sintered silver joints are reported.
  • Keywords
    mechanical properties; nanostructured materials; silver; sintering; thermal properties; RoHS compliance; cycling capability; die-attach technology; high-temperature; lead-free; low-temperature sintering; nanoscale silver pastes; power electronics modules; silver sintering; thermal properties; thermo-mechanical properties; Chemical technology; Environmentally friendly manufacturing techniques; Heating; Lead; Mechanical factors; Optical films; Power electronics; Silver; Solvents; Temperature;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Electronic Packaging Technology & High Density Packaging, 2009. ICEPT-HDP '09. International Conference on
  • Conference_Location
    Beijing
  • Print_ISBN
    978-1-4244-4658-2
  • Electronic_ISBN
    978-1-4244-4659-9
  • Type

    conf

  • DOI
    10.1109/ICEPT.2009.5270709
  • Filename
    5270709