DocumentCode
3521540
Title
Analytical approximation of complex band structures for band-to-band tunneling models
Author
Guan, Ximeng ; Kim, Donghyun ; Saraswat, Krishna C. ; Wong, H. -S Philip
Author_Institution
Dept. of Electr. Eng., Stanford Univ., Stanford, CA, USA
fYear
2011
fDate
8-10 Sept. 2011
Firstpage
267
Lastpage
270
Abstract
A unified analytical expression is developed to accurately describe the complex band structures in commonly used diamond and zinc-blende semiconductors. Fitting the model to the numerical complex band structures shows a significantly improved accuracy as compared with the effective mass approximation. The model is used to study the band-to-band tunneling in Si, Ge, GaAs and GaSb, with a maximum error of <;1.4% compared to the numerical band structures.
Keywords
III-V semiconductors; band structure; effective mass; elemental semiconductors; gallium arsenide; gallium compounds; germanium; silicon; tunnelling; GaAs; GaSb; Ge; Si; band structures; band-band tunneling models; diamond; effective mass approximation; zinc-blende semiconductors; Approximation methods; Effective mass; Fitting; Numerical models; Silicon; Tunneling; band-to-band tunneling; complex band structure; effective mass approximation; non-parabolic approximation;
fLanguage
English
Publisher
ieee
Conference_Titel
Simulation of Semiconductor Processes and Devices (SISPAD), 2011 International Conference on
Conference_Location
Osaka
ISSN
1946-1569
Print_ISBN
978-1-61284-419-0
Type
conf
DOI
10.1109/SISPAD.2011.6035076
Filename
6035076
Link To Document