DocumentCode
3521683
Title
3D TCAD simulation of advanced CMOS image sensors
Author
Essa, Z. ; Boulenc, P. ; Tavernier, C. ; Hirigoyen, F. ; Crocherie, A. ; Michelot, Julien ; Rideau, D.
Author_Institution
STMicroelectron., Crolles, France
fYear
2011
fDate
8-10 Sept. 2011
Firstpage
187
Lastpage
190
Abstract
This paper presents a full 3-Dimensionnal TCAD simulation methodology for advanced CMOS image sensors. In order to consider 3D process effects, full 3D TCAD process simulations have been carried out on different advanced pixels. Based upon the obtained 3D doping distributions, 3D opto-electrical device simulation results have been compared to both 2D based approaches and experimental results. Full 3D simulation results show a qualitative agreement with measurements.
Keywords
CMOS image sensors; technology CAD (electronics); 3D TCAD simulation methodology; 3D doping distribution; 3D opto- electrical device simulation; 3D process effect; advanced CMOS image sensor; qualitative agreement; Doping; Mathematical model; Photodiodes; Semiconductor device modeling; Semiconductor process modeling; Solid modeling; Three dimensional displays; 3D simulation; CMOS process; Image sensors; TCAD;
fLanguage
English
Publisher
ieee
Conference_Titel
Simulation of Semiconductor Processes and Devices (SISPAD), 2011 International Conference on
Conference_Location
Osaka
ISSN
1946-1569
Print_ISBN
978-1-61284-419-0
Type
conf
DOI
10.1109/SISPAD.2011.6035082
Filename
6035082
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