Title :
A physical approach to mismatch modelling and parameter correlations
Author :
Oelun, J. ; Grünebaum, Ulrich ; Schumacher, Klaus
Author_Institution :
Dortmund Univ., Germany
Abstract :
The currently available first order mismatch models cannot explain many of the observed effects. The physical modelling approach described in this paper leads to a deeper understanding and gives a very precise description of actual mismatch behaviour including parameter correlations in a closed form. The model needs only few parameters which are discussed below
Keywords :
integrated circuit modelling; integrated circuit; mismatch effects; parameter correlations; physical model; Convolution; Fabrication; Frequency; Geometry; MOSFETs; Predictive models; Semiconductor device modeling; Time domain analysis; Topology; Transfer functions;
Conference_Titel :
Circuits and Systems, 2000. Proceedings. ISCAS 2000 Geneva. The 2000 IEEE International Symposium on
Conference_Location :
Geneva
Print_ISBN :
0-7803-5482-6
DOI :
10.1109/ISCAS.2000.858767
