• DocumentCode
    3522150
  • Title

    High density indium bumping using electrodeposition enhanced by megasonic agitation

  • Author

    Tian, Yingtao ; Liu, Changqing ; Hutt, David ; Stevens, Bob ; Flynn, David ; Desmulliez, Marc P Y

  • Author_Institution
    Wolfson Sch. of Mech. & Manuf. Eng., Loughborough Univ., Loughborough, UK
  • fYear
    2009
  • fDate
    9-11 Dec. 2009
  • Firstpage
    31
  • Lastpage
    35
  • Abstract
    Electrodeposition has been utilized to fulfill the demand of high density indium bumping used in high energy physics applications. Previous studies have shown the capability of electrodeposition to achieve high yield and high density indium bumps. The challenge exists to improve the bump height uniformity and consistency of electroplated indium bumps across the wafer at ultra-fine pitches with the highest yield. This paper reports progress towards the electroplating indium bumping process assisted by megasonic agitation. Electroplating of indium onto non-patterned substrates was initially conducted to investigate the performance of the solution with megasonic agitation. Further trials were carried out on 4 inch silicon dummy wafers to create indium bumps at 50 ¿m pitch. The results reflect that bubbles created during the plating process with megasonic agitation can affect the quality of the deposit and the yield of indium bumping, under the experimental conditions used in this study.
  • Keywords
    electroplating; elemental semiconductors; indium; silicon; ultrasonic applications; ultrasonic effects; In; Si; bubbles; electrodeposition; electroplating; high density indium bumping; high energy physics applications; megasonic agitation; nonpatterned substrates; plating process; silicon dummy wafers; size 4 in; ultrafine pitches; Bonding; Current density; Fabrication; Frequency; Indium; Laboratories; Maintenance engineering; Manufacturing processes; Microstructure; Production;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Electronics Packaging Technology Conference, 2009. EPTC '09. 11th
  • Conference_Location
    Singapore
  • Print_ISBN
    978-1-4244-5099-2
  • Electronic_ISBN
    978-1-4244-5100-5
  • Type

    conf

  • DOI
    10.1109/EPTC.2009.5416576
  • Filename
    5416576