Title :
Fabrication of GaAsN solar cell by chemical beam epitaxy with improved minority-carrier lifetime
Author :
Ikeda, K. ; Hwang, J.H. ; Inagaki, M. ; Kojima, N. ; Ohshita, Y. ; Yamaguchi, M.
Author_Institution :
Toyota Technol. Inst., Nagoya, Japan
Abstract :
A GaAsN solar cell is fabricated by using the chemical beam epitaxy. The properties of the external quantum efficiency and short circuit current density are studied by comparing with the calculated values. The external quantum efficiency of the fabricated GaAsN solar cell was lower in the low wavelength region than the calculated value which does not consider the recombination at the interfaces. That is considered to be the one of the reasons for the low short circuit current density by 15 to 20 percent compared to the calculated value.
Keywords :
III-V semiconductors; chemical beam epitaxial growth; current density; gallium arsenide; minority carriers; solar cells; GaAsN; chemical beam epitaxy; external quantum efficiency properties; improved minority-carrier lifetime; short circuit current density; solar cell fabrication; Gold; Indexes; Lattices; Photonic band gap; Photovoltaic cells; Substrates; GaAsN; charge carrier lifetime; chemical beam epitaxy; photovoltaic cells;
Conference_Titel :
Photovoltaic Specialists Conference (PVSC), 2012 38th IEEE
Conference_Location :
Austin, TX
Print_ISBN :
978-1-4673-0064-3
DOI :
10.1109/PVSC.2012.6318112
