DocumentCode
3522209
Title
Fabrication of GaAsN solar cell by chemical beam epitaxy with improved minority-carrier lifetime
Author
Ikeda, K. ; Hwang, J.H. ; Inagaki, M. ; Kojima, N. ; Ohshita, Y. ; Yamaguchi, M.
Author_Institution
Toyota Technol. Inst., Nagoya, Japan
fYear
2012
fDate
3-8 June 2012
Abstract
A GaAsN solar cell is fabricated by using the chemical beam epitaxy. The properties of the external quantum efficiency and short circuit current density are studied by comparing with the calculated values. The external quantum efficiency of the fabricated GaAsN solar cell was lower in the low wavelength region than the calculated value which does not consider the recombination at the interfaces. That is considered to be the one of the reasons for the low short circuit current density by 15 to 20 percent compared to the calculated value.
Keywords
III-V semiconductors; chemical beam epitaxial growth; current density; gallium arsenide; minority carriers; solar cells; GaAsN; chemical beam epitaxy; external quantum efficiency properties; improved minority-carrier lifetime; short circuit current density; solar cell fabrication; Gold; Indexes; Lattices; Photonic band gap; Photovoltaic cells; Substrates; GaAsN; charge carrier lifetime; chemical beam epitaxy; photovoltaic cells;
fLanguage
English
Publisher
ieee
Conference_Titel
Photovoltaic Specialists Conference (PVSC), 2012 38th IEEE
Conference_Location
Austin, TX
ISSN
0160-8371
Print_ISBN
978-1-4673-0064-3
Type
conf
DOI
10.1109/PVSC.2012.6318112
Filename
6318112
Link To Document