Title :
Electrochemical atomic layer deposition of a CdTe/PbTe superlattice for the absorber layer of a solar cell
Author :
Singh, Pritpal ; Kabalan, Amal
Author_Institution :
Villanova Univ., Villanova, PA, USA
Abstract :
Electrochemical Atomic Layer Deposition (ECALD) has been used to deposit CdTe and PbTe thin films. CdTe and PbTe are of interest in forming a superlattice structure to be used in the absorber layer of a solar cell. Cyclic voltammetry was used to study the Underpotential Deposition (UPD) of the constituent compounds. Pb was grown at a constant -0.35V vs. Ag/AgCl reference electrode.. Te deposition potential was varied from -0.55V to -0.4V. Cd was deposited at -0.55V and Te was deposited at -0.8V. The coverage of the films was estimated using the coulometry method. The chemical composition of the films was characterized using Energy-Dispersive X-ray Spectroscopy (EDS) on a Scanning Electron Microscope (SEM). The crystallinity of the films was studied using a glancing angle x-ray diffractometer. The bandgaps of the films were determined using optical reflection data.
Keywords :
II-VI semiconductors; X-ray chemical analysis; X-ray diffractometers; absorption; atomic layer deposition; cadmium compounds; electrochemical electrodes; energy gap; light reflection; scanning electron microscopy; semiconductor superlattices; semiconductor thin films; silver; silver compounds; solar cells; voltammetry (chemical analysis); Ag-AgCl; CdTe-PbTe; ECALD; EDS; SEM; UPD; absorber layer; angle X-ray diffractometer; band gaps; coulometry method; cyclic voltammetry; electrochemical atomic layer deposition; energy-dispersive X-ray spectroscopy; optical reflection data; reference electrode; scanning electron microscope; solar cell; superlattice structure; thin films; underpotential deposition; voltage -0.55 V to -0.4 V; voltage -0.8 V; Atomic layer deposition; Compounds; Electric potential; Epitaxial growth; Lead; Superlattices; cadmium; electrochemical process; lead; photovoltaic cells; superlattice; tellurium;
Conference_Titel :
Photovoltaic Specialists Conference (PVSC), 2012 38th IEEE
Conference_Location :
Austin, TX
Print_ISBN :
978-1-4673-0064-3
DOI :
10.1109/PVSC.2012.6318114