The equivalent transmission-line approach to resonant tunneling problems described by the Kane model

Author

Sanada, H. ; Suzuki, M. ; Tsukui, Y. ; Nagai, N.

Author_Institution

Res. Inst. for Electron. Sci., Hokkaido Univ., Sapporo, Japan

Volume

4

fYear

2000

fDate

2000

Firstpage

569

Abstract

This paper presents a method for solving resonant tunneling problems described by Kane´s two-band and three-band models. The method is based on equivalent transmission-lines for the two-band and three-band models. The well-developed theory of transmission-lines can be effectively used to calculate the transmission properties of resonant tunneling structures. By using the proposed method, quantum mechanical wave problems in resonant tunneling structures composed of various semiconductor materials can be systematically analyzed and guidelines are given for designing new electron wave devices

Keywords

electron waveguides; equivalent circuits; resonant tunnelling; resonant tunnelling devices; semiconductor device models; transmission line theory; Kane model; electron wave devices; equivalent transmission-line approach; quantum mechanical wave problems; resonant tunneling problems; resonant tunneling structures; semiconductor materials; three-band model; transmission properties; two-band model; Circuit simulation; Electrons; Equivalent circuits; Finite element methods; Guidelines; Quantum mechanics; Resonant tunneling devices; Semiconductor materials; Transmission line matrix methods; Transmission lines;

fLanguage

English

Publisher

ieee

Conference_Titel

Circuits and Systems, 2000. Proceedings. ISCAS 2000 Geneva. The 2000 IEEE International Symposium on

Conference_Location

Geneva

Print_ISBN

0-7803-5482-6

Type

conf

DOI

10.1109/ISCAS.2000.858815

Filename

858815