Title :
An in-depth numerical investigation into packaging design of multi-finger GaInP/GaAs collector-up HBTs
Author :
Tseng, H.C. ; Chen, J.Y.
Author_Institution :
Dept. of Electron. Eng., Kun Shan Univ., Tainan, Taiwan
Abstract :
A novel finite-element modeling approach is developed to design thermal-via packaging configurations of collector-up heterojunction bipolar transistors (C-up HBTs) in high-power amplifiers (HPAs). The thermal interaction between HBT fingers has been examined based on the temperature distribution phenomena in multifinger C-up HBTs. The results reveal that the overall compactness of thermal-via configuration can be further improved more than 33%.
Keywords :
III-V semiconductors; electronics packaging; finite element analysis; gallium arsenide; gallium compounds; heterojunction bipolar transistors; indium compounds; power amplifiers; thermal analysis; wide band gap semiconductors; C-up HBT packaging design; GaInP-GaAs; finite-element modeling; heterojunction bipolar transistor; in-depth numerical investigation; multifinger collector-up transistor; temperature distribution phenomena; thermal-via packaging configuration; Electronic packaging thermal management; Fingers; Finite element methods; Gallium arsenide; Heterojunction bipolar transistors; Performance analysis; Power system reliability; Temperature distribution; Thermal management; Thermal resistance;
Conference_Titel :
Electronic Packaging Technology & High Density Packaging, 2009. ICEPT-HDP '09. International Conference on
Conference_Location :
Beijing
Print_ISBN :
978-1-4244-4658-2
Electronic_ISBN :
978-1-4244-4659-9
DOI :
10.1109/ICEPT.2009.5270750
