An in-depth numerical investigation into packaging design of multi-finger GaInP/GaAs collector-up HBTs

Author

Tseng, H.C. ; Chen, J.Y.

Author_Institution

Dept. of Electron. Eng., Kun Shan Univ., Tainan, Taiwan

fYear

2009

fDate

10-13 Aug. 2009

Firstpage

280

Lastpage

282

Abstract

A novel finite-element modeling approach is developed to design thermal-via packaging configurations of collector-up heterojunction bipolar transistors (C-up HBTs) in high-power amplifiers (HPAs). The thermal interaction between HBT fingers has been examined based on the temperature distribution phenomena in multifinger C-up HBTs. The results reveal that the overall compactness of thermal-via configuration can be further improved more than 33%.

Keywords

III-V semiconductors; electronics packaging; finite element analysis; gallium arsenide; gallium compounds; heterojunction bipolar transistors; indium compounds; power amplifiers; thermal analysis; wide band gap semiconductors; C-up HBT packaging design; GaInP-GaAs; finite-element modeling; heterojunction bipolar transistor; in-depth numerical investigation; multifinger collector-up transistor; temperature distribution phenomena; thermal-via packaging configuration; Electronic packaging thermal management; Fingers; Finite element methods; Gallium arsenide; Heterojunction bipolar transistors; Performance analysis; Power system reliability; Temperature distribution; Thermal management; Thermal resistance;

fLanguage

English

Publisher

ieee

Conference_Titel

Electronic Packaging Technology & High Density Packaging, 2009. ICEPT-HDP '09. International Conference on

Conference_Location

Beijing

Print_ISBN

978-1-4244-4658-2

Electronic_ISBN

978-1-4244-4659-9

Type

conf

DOI

10.1109/ICEPT.2009.5270750

Filename

5270750