• DocumentCode
    3522401
  • Title

    Electromigration investigations of aluminum alloy interconnects

  • Author

    Setlik, B. ; Heskett, D. ; Aubin, K. ; Briere, M.A.

  • Author_Institution
    Dept. of Phys., Rhode Island Univ., Kingston, RI, USA
  • fYear
    1997
  • fDate
    20-23 Jul 1997
  • Firstpage
    159
  • Lastpage
    160
  • Abstract
    Electrical measurements of test structures of Al-0.5%Cu interconnects were performed as a function of temperature and current density. We have examined 1.8 μm wide×0.85 μm thick×250 μm long straight structures and found an activation energy, Ea=0.95 eV and a current exponent, n=2.63, after correction for Joule heating
  • Keywords
    aluminium alloys; copper alloys; current density; electromigration; failure analysis; integrated circuit interconnections; integrated circuit metallisation; integrated circuit reliability; 0.85 micron; 1.8 micron; 250 micron; Al alloy interconnects; Al-0.5%Cu interconnects; AlCu; activation energy; current density; electrical measurements; electromigration study; mean time to failure; temperature; test structures; Aluminum alloys; Current density; Current measurement; Density measurement; Electrical resistance measurement; Electromigration; Heating; Performance evaluation; Semiconductor device testing; Temperature distribution;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    University/Government/Industry Microelectronics Symposium, 1997., Proceedings of the Twelfth Biennial
  • Conference_Location
    Rochester, NY
  • ISSN
    0749-6877
  • Print_ISBN
    0-7803-3790-5
  • Type

    conf

  • DOI
    10.1109/UGIM.1997.616715
  • Filename
    616715
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=3522401