DocumentCode :
3522807
Title :
Novel solution processing of high efficiency earth abundant CZTSSe solar cells
Author :
Yang, Wenbing ; Duan, Hsin-Sheng ; Bob, Brion ; Lei, Bao ; Li, Sheng-Han ; Yang, Yang
Author_Institution :
Dept. of Mater. Sci. & Eng., Univ. of California Los Angeles, Los Angeles, CA, USA
fYear :
2012
fDate :
3-8 June 2012
Abstract :
We present a novel solution-based approach to process CZTSSe absorbers with molecular-level homogeneity. These devices have achieved 8.08 % power conversion efficiency using fully dissolved hydrazine-based CZTS precursor complexes in which each of the elemental constituents are mixed on the molecular level. The nature of the newly developed hydrazine precursor complexes enables a kinetically favorable reaction route to form kesterite CZTS at temperatures as low as 250 °C. Structural and optoelectronic characterization of the as-prepared CZTS films indicates the robustness of this approach in forming single phase Kesterite CZTS with the flexibility to tailor the band gap between 1.0 to 1.5 eV. The low processing temperatures and excellent film homogeneity imply that with further development this technology may be suitable for the large-scale manufacturing of uniform films and high performance devices.
Keywords :
II-VI semiconductors; copper compounds; power conversion; solar cells; thin film devices; tin compounds; wide band gap semiconductors; zinc compounds; CZTSSe; Cu2ZnSn(SxSe1-x)4; earth abundant; hydrazine precursor complex; kesterite CZTS; molecular level homogeneity; optoelectronic characterization; power conversion efficiency; structural characterization; Additives; Annealing; Earth; Films; Photonic band gap; Photovoltaic cells; Zinc; CZTS; earth abundant; solar cells; solution processing; thin film;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Photovoltaic Specialists Conference (PVSC), 2012 38th IEEE
Conference_Location :
Austin, TX
ISSN :
0160-8371
Print_ISBN :
978-1-4673-0064-3
Type :
conf
DOI :
10.1109/PVSC.2012.6318143
Filename :
6318143
Link To Document :
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