DocumentCode :
3522824
Title :
Low-cost Cu2ZnSnS4 thin films for large-area high-efficiency heterojunction solar cells
Author :
Das, Sandip ; Mandal, Krishna C.
Author_Institution :
Dept. of Electr. Eng., Univ. of South Carolina, Columbia, SC, USA
fYear :
2012
fDate :
3-8 June 2012
Abstract :
Cu2ZnSnS4 (CZTS) thin films have been deposited on soda-lime glass (SLG) and Mo-coated SLG substrates using a low-cost spray pyrolysis technique followed by sulfurization under H2S flow at 540°C. Aqueous solution containing CuCl, ZnCl2, SnCl4 and thiourea was used as precursor. Spray deposition was carried out at three different substrate temperatures of 280°C, 360°C and 440°C. Deposition conditions were optimized to obtain the best film properties. Structural, morphological and compositional analysis of the as-deposited and sulfurized CZTS films were carried out by x-ray diffraction (XRD), scanning electron microscopy (SEM), atomic force microscopy (AFM), energy dispersive x-ray spectroscopy (EDX) and x-ray photoelectron spectroscopy (XPS). Optical and electrical properties were measured by UV-Vis spectroscopy, van der Pauw and Hall effect measurements. XRD spectra confirmed the formation of kesterite CZTS films. Grown CZTS films showed an absorption coefficient >;104 cm-1 and the bandgaps were found to lie between 1.42-1.72 eV at room temperature depending on deposition conditions and post deposition sulfurization treatments. All films were found to be of p-type conductivity with an average carrier concentration in the order of 1018-1020 cm-3. Optimum quality films were obtained for films fabricated at 360°C and no secondary phases were observed. n-CdS window layer was deposited on p-CZTS films prepared at 360°C substrate temperature to fabricate p-CZTS/n-CdS heterojunction solar cells. The heterojunction exhibited an open-circuit voltage (VOC) of 290 mV and a short-circuit current density (JSC) of 3.1 mA/cm2 under AM 1.5 illumination. Details of CZTS thin film fabrication, processing, and characterization results are presented.
Keywords :
Hall effect; II-VI semiconductors; X-ray chemical analysis; X-ray diffraction; X-ray photoelectron spectra; atomic force microscopy; cadmium compounds; carrier density; copper compounds; current density; pyrolysis; scanning electron microscopy; semiconductor growth; semiconductor heterojunctions; semiconductor thin films; short-circuit currents; solar cells; spin coating; thin film devices; tin compounds; ultraviolet spectra; visible spectra; zinc compounds; AFM; AM 1.5 illumination; CZTS thin film fabrication; CZTS thin films; CdS; Cu2ZnSnS4; EDX; Hall effect measurements; Mo; SEM; SLG; UV-Vis spectroscopy; X-ray diffraction; X-ray photoelectron spectroscopy; XPS; XRD spectra; absorption coefficient; atomic force microscopy; average carrier concentration; band gaps; compositional analysis; electrical properties; electron volt energy 1.42 eV to 1.72 eV; energy dispersive X-ray spectroscopy; grown CZTS films; heterojunction solar cells; kesterite CZTS films; large-area high-efficiency heterojunction solar cells; low-cost spray pyrolysis technique; low-cost thin films; morphological analysis; open-circuit voltage; optical properties; p-type conductivity; post deposition sulfurization treatments; scanning electron microscopy; short-circuit current density; soda-lime glass; spray deposition; structural analysis; temperature 280 degC; temperature 293 K to 298 K; temperature 360 degC; temperature 440 degC; temperature 540 degC; thiourea; van der Pauw measurements; voltage 290 mV; Films; Heterojunctions; Photonic band gap; Photovoltaic cells; Scanning electron microscopy; Substrates; Temperature measurement; CZTS; Cu2ZnSnS4; characterization; solar cell; spray pyrolysis; thin film;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Photovoltaic Specialists Conference (PVSC), 2012 38th IEEE
Conference_Location :
Austin, TX
ISSN :
0160-8371
Print_ISBN :
978-1-4673-0064-3
Type :
conf
DOI :
10.1109/PVSC.2012.6318144
Filename :
6318144
Link To Document :
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