Title :
Electrical properties of (Bi4.0−x, Ndx)(Ti2.95V0.05)O12 thin films with different Nd-content
Author :
Yang, Feng ; Tang, Ming-hua
Author_Institution :
Sch. of Mater. Sci. & Eng., Univ. of Jinan, Jinan, China
Abstract :
Ferroelectric thin films of Nd3+/V5+-cosubstituted bismuth titanate, i.e., (Bi4.0-x, Ndx)(Ti2.95V0.05)O12 (x = 0, 0.25 and 0.5), were fabricated on Pt(111). Electrical properties of these ferroelectric thin films were investigated using polarization hysteresis loops, leakage current-voltage, and fatigue characteristics. An optimum Nd-content was identified to increase polarization. In contrast, an abundant or insufficient Nd-content could have negative effects. No fatigue phenomenon was observed up to ~ 1011 switching cycles and the leakage current of the film (x =0.5) was kept below 10-9 A at a sweeping voltage less than 5 V. Dependence of remanent polarization (2Pr) on the frequency, in the range from 0 to 10 kHz, was also investigated. These findings suggest great impact for high-density FeRAM applications.
Keywords :
bismuth compounds; dielectric hysteresis; dielectric polarisation; ferroelectric materials; ferroelectric thin films; leakage currents; neodymium compounds; (Bi4.0-xNdx)(Ti2.95V0.05)O12; Pt(III) surface; bismuth titanate; electrical properties; fatigue phenomenon; ferroelectric thin films; frequency 0 kHz to 10 kHz; high-density FeRAM applications; hysteresis loops; leakage current; leakage current-voltage; remanent polarization; sweeping voltage; switching cycles; Bismuth; Fatigue; Films; Frequency dependence; Hysteresis; Leakage current; Nonvolatile memory; BNTV; BTV; Electrical properties; Ferroelectric thin film;
Conference_Titel :
Piezoelectricity, Acoustic Waves and Device Applications (SPAWDA), 2011 Symposium on
Conference_Location :
Shenzhen
Print_ISBN :
978-1-4673-1075-8
DOI :
10.1109/SPAWDA.2011.6167200
