Title :
40Gb/s Ge-on-SOI waveguide photodetectors by selective Ge growth
Author :
Tao Yin ; Cohen, Reuven ; Morse, Mike M ; Sarid, Gadi ; Chetrit, Yoel ; Rubin, Daniel ; Paniccia, Mario J
Author_Institution :
Intel Corp., Santa Clara, CA, USA
Abstract :
Ge waveguide photodetectors with dimension of 7.4 μm × 50 μm and 4.4 μm × 100 μm demonstrated optical bandwidth of 31.3 GHz and 29.4 GHz, responsivity of 0.89 A/W and 1.16 A/W at 1550 nm, and 40 Gb/s open eye diagrams at -2V.
Keywords :
elemental semiconductors; germanium; optical waveguides; photodetectors; silicon; silicon-on-insulator; Ge-Si; Ge-on-SOI waveguide photodetectors; bit rate 40 Gbit/s; open eye diagrams; optical bandwidth; responsivity; selective Ge growth; voltage -2 V; wavelength 1550 nm; Bandwidth; Dark current; Detectors; High speed optical techniques; Loss measurement; Optical surface waves; Optical waveguides; Photodetectors; Propagation losses; Substrates;
Conference_Titel :
Optical Fiber communication/National Fiber Optic Engineers Conference, 2008. OFC/NFOEC 2008. Conference on
Conference_Location :
San Diego, CA
Print_ISBN :
978-1-55752-856-8
DOI :
10.1109/OFC.2008.4528351
