DocumentCode :
3524279
Title :
Influence of absorbed water on electronic transport in organosilicon plasma polymers
Author :
Tyczkowski, J. ; Sielski, J.
Author_Institution :
Dept. of Phys. Chem., Marburg Univ., West Germany
fYear :
1989
fDate :
3-6 Jul 1989
Firstpage :
177
Lastpage :
181
Abstract :
Studies of the influence of strongly bound water on electrical properties of plasma-deposited organosilicon films indicate that two types of hopping centers exist in the films. The first type can be destroyed by water molecules and the second is stable. In SiNSi films both types of hopping centers exist, but in SiOSi films only the second type exists. However, in both SiNSi and SiOSi films, water molecules activate initially inactive intrinsic acceptor centers. As a result the electrical conductivity increases in organosilicon films in the presence of absorbed water
Keywords :
electrical conductivity of solids; hopping conduction; organic compounds; organic semiconductors; plasma deposited coatings; semiconductor thin films; sorption; absorbed water; electrical conductivity; electrical properties; electronic transport; hopping centres; intrinsic acceptor centres; plasma-deposited organosilicon films; strongly bound water; Conductivity; Electrodes; Electron beams; Humidity; Plasma chemistry; Plasma measurements; Plasma properties; Plasma temperature; Plasma transport processes; Polymer films;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Conduction and Breakdown in Solid Dielectrics, 1989., Proceedings of the 3rd International Conference on
Conference_Location :
Trondheim
Type :
conf
DOI :
10.1109/ICSD.1989.69184
Filename :
69184
Link To Document :
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