• DocumentCode
    3524908
  • Title

    2.75 GHz low noise 0.35 µm CMOS transimpedance amplifier

  • Author

    Hammoudi, Escid ; Mokhtar, Attari

  • Author_Institution
    Lab. of Instrum., USTHB, Algies, Algeria
  • fYear
    2010
  • fDate
    23-25 June 2010
  • Firstpage
    928
  • Lastpage
    932
  • Abstract
    A low-noise and high-bandwidth Transimpedance Amplifier (TIA) at 2.75 GHz has been implemented in 0.35 µm CMOS technology. The designed amplifier is configured on three identical stages that use an active load. This structure operates at 3.3V power supply voltage, displays a transimpedance gain of 531 Ω, exhibits a gain bandwidth product (GBW) of 1.46 THz×Ω and a low-noise level of about 12.8 pA/√Hz , while operating with a photodiode capacitance of 0.4 pF. The predicted performance is verified using simulations tools with 0.35 µm CMOS AMS parameters.
  • Keywords
    Bandwidth; CMOS integrated circuits; Capacitance; Cutoff frequency; Gain; Noise; Optical fiber amplifiers;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Control & Automation (MED), 2010 18th Mediterranean Conference on
  • Conference_Location
    Marrakech, Morocco
  • Print_ISBN
    978-1-4244-8091-3
  • Type

    conf

  • DOI
    10.1109/MED.2010.5547749
  • Filename
    5547749
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=3524908