DocumentCode :
3525138
Title :
Stress analysis of silicon wafer based photovoltaic modules in operation
Author :
Yixian, Lee ; Tay, Andrew A O
fYear :
2012
fDate :
3-8 June 2012
Abstract :
One cause of failure in PV modules is delamination in the interfaces. After lamination, when layers of PV materials are bonded together at about 145 °C and subsequently cooled down, residual stresses are induced due to the mismatch in coefficients of thermal expansion (CTE). When the PV laminate is subsequently framed and exposed to sunlight, the temperature distribution induced in the module will redistribute the residual stresses. The main objective of this paper is to employ finite element analysis to determine the stress distribution induced in the PV module during operation. Differences in stresses developed in modules with float glass covers and those with tempered glass covers were determined.
Keywords :
elemental semiconductors; finite element analysis; internal stresses; silicon; solar cells; stress analysis; sunlight; CTE; PV laminate; PV materials; Si; coefficient of thermal expansion; finite element analysis; float glass; residual stresses; silicon wafer based photovoltaic modules; stress analysis; stress distribution; sunlight; temperature distribution; tempered glass; Delamination; Glass; Laminates; Lamination; Silicon; Tensile stress; Delamination; materials reliability; photovoltaic cells; silicon; thermal stresses;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Photovoltaic Specialists Conference (PVSC), 2012 38th IEEE
Conference_Location :
Austin, TX
ISSN :
0160-8371
Print_ISBN :
978-1-4673-0064-3
Type :
conf
DOI :
10.1109/PVSC.2012.6318252
Filename :
6318252
Link To Document :
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