Growth and characterization of Ga(In)NAs on GaAs substrates

Author

Pan, Zhong ; Li, Lianhe ; Lin, Yaowang ; Zhou, Zengqi ; Wu, Ronghan

Author_Institution

Inst. of Semicond., Acad. Sinica, Beijing, China

Volume

2

fYear

1999

fDate

18-22 Oct. 1999

Firstpage

1446

Abstract

The growth of Ga(In)NAs/GaAs is investigated by DC plasma-assisted MBE. The N incorporation, composition fluctuations and strain relaxation are characterized by X-ray diffraction measurements and dynamical simulations. /spl delta/-GaN/sub x/As/sub 1-x//GaAs superlattices and GaN/sub x/As/sub 1-x/ alloys of good quality are obtained through optimizing the growth conditions. Rapid-thermal annealing can improve the quality of Ga(In)NAs/GaAs significantly.

Keywords

III-V semiconductors; X-ray diffraction; gallium arsenide; gallium compounds; indium compounds; molecular beam epitaxial growth; photoluminescence; plasma materials processing; rapid thermal annealing; reflection high energy electron diffraction; semiconductor growth; semiconductor heterojunctions; semiconductor superlattices; /spl delta/-GaN/sub x/As/sub 1-x//GaAs superlattices; DC plasma-assisted MBE; Ga(In)NAs/GaAs; GaAs; GaAs substrates; GaInNAs; GaInNAs-GaAs; GaN/sub x/As/sub 1-x/ alloys; GaNAs; GaNAs-GaAs; N incorporation; X-ray diffraction measurements; composition fluctuations; dynamical simulation; growth condition; quality; rapid-thermal annealing; strain relaxation; Annealing; Fluctuations; Gallium arsenide; Gallium nitride; Plasma measurements; Plasma simulation; Plasma x-ray sources; Strain measurement; Superlattices; X-ray diffraction;

fLanguage

English

Publisher

ieee

Conference_Titel

Communications, 1999. APCC/OECC '99. Fifth Asia-Pacific Conference on ... and Fourth Optoelectronics and Communications Conference

Conference_Location

Beijing, China

Print_ISBN

7-5635-0402-8

Type

conf

DOI

10.1109/APCC.1999.820549

Filename

820549