Title :
Growth and characterization of Ga(In)NAs on GaAs substrates
Author :
Pan, Zhong ; Li, Lianhe ; Lin, Yaowang ; Zhou, Zengqi ; Wu, Ronghan
Author_Institution :
Inst. of Semicond., Acad. Sinica, Beijing, China
Abstract :
The growth of Ga(In)NAs/GaAs is investigated by DC plasma-assisted MBE. The N incorporation, composition fluctuations and strain relaxation are characterized by X-ray diffraction measurements and dynamical simulations. /spl delta/-GaN/sub x/As/sub 1-x//GaAs superlattices and GaN/sub x/As/sub 1-x/ alloys of good quality are obtained through optimizing the growth conditions. Rapid-thermal annealing can improve the quality of Ga(In)NAs/GaAs significantly.
Keywords :
III-V semiconductors; X-ray diffraction; gallium arsenide; gallium compounds; indium compounds; molecular beam epitaxial growth; photoluminescence; plasma materials processing; rapid thermal annealing; reflection high energy electron diffraction; semiconductor growth; semiconductor heterojunctions; semiconductor superlattices; /spl delta/-GaN/sub x/As/sub 1-x//GaAs superlattices; DC plasma-assisted MBE; Ga(In)NAs/GaAs; GaAs; GaAs substrates; GaInNAs; GaInNAs-GaAs; GaN/sub x/As/sub 1-x/ alloys; GaNAs; GaNAs-GaAs; N incorporation; X-ray diffraction measurements; composition fluctuations; dynamical simulation; growth condition; quality; rapid-thermal annealing; strain relaxation; Annealing; Fluctuations; Gallium arsenide; Gallium nitride; Plasma measurements; Plasma simulation; Plasma x-ray sources; Strain measurement; Superlattices; X-ray diffraction;
Conference_Titel :
Communications, 1999. APCC/OECC '99. Fifth Asia-Pacific Conference on ... and Fourth Optoelectronics and Communications Conference
Conference_Location :
Beijing, China
Print_ISBN :
7-5635-0402-8
DOI :
10.1109/APCC.1999.820549
