DocumentCode
3525759
Title
10 Gbit/s Semi-Insulating Buried Heterostructure Loss-less Reflective Amplified Modulator for Wavelength Agnostic Networks
Author
Dupuis, N. ; Garreau, A. ; Jany, C. ; Decobert, Jean ; Alexandre, F. ; Brenot, Romain ; Landreau, Jean ; Lagay, Nadine ; Martin, F. ; Carpentier, D. ; Kazmierski, C.
Author_Institution
III-V Lab., Alcatel-Thales, Marcoussis, France
fYear
2008
fDate
24-28 Feb. 2008
Firstpage
1
Lastpage
3
Abstract
We integrated an AlGalnAs modulator-amplifier using semi-insulating buried hetrostructure and selective area growth. The reflective component exhibits insertion gain, operates at 10Gbit/s over 80nm and links bi-directional 10km SMF up to 60°C.
Keywords
III-V semiconductors; aluminium compounds; gallium arsenide; indium compounds; modulators; AlGaInAs; insertion gain; semi-insulating buried heterostructure loss-less reflective amplified modulator; wavelength agnostic networks; Absorption; Costs; Indium phosphide; Optical network units; Predictive models; Semiconductor optical amplifiers; Thermal resistance; Waveguide discontinuities; Waveguide transitions; Wavelength division multiplexing;
fLanguage
English
Publisher
ieee
Conference_Titel
Optical Fiber communication/National Fiber Optic Engineers Conference, 2008. OFC/NFOEC 2008. Conference on
Conference_Location
San Diego, CA
Print_ISBN
978-1-55752-856-8
Type
conf
DOI
10.1109/OFC.2008.4528436
Filename
4528436
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