Title :
Dielectric losses and breakdown in silicone gel
Author :
Do, M.T. ; Augé, J.L. ; Lesaint, O.
Author_Institution :
Lab. for Electrostatics & Dielectric Mater., French Nat. Center for Sci. Res.
Abstract :
Silicone gels are used for the packaging and insulation of power electronic components such as high voltage IGBT modules, mainly due to their good mechanical and thermal properties. Nevertheless, the knowledge of their dielectric properties is still uncompleted. The aim of this paper is to present the results of measurements of dielectric losses versus frequency, as well as breakdown field under a large temperature range (up to 160 degC). Losses are essentially due to conduction phenomena, while the effect of polarization is less important. The influence of temperature is rather large, and a marked effect of time (ageing) is also recorded, especially when the temperature is raised. Results are discussed with the perspective of use in high temperature power semiconductors.
Keywords :
ageing; dielectric losses; electric breakdown; gels; organic insulating materials; polymer insulators; power semiconductor devices; 160 C; ageing; conduction phenomena; dielectric breakdown; dielectric losses; dielectric properties; high temperature power semiconductors; mechanical properties; power electronic components; silicone gel; thermal properties; Dielectric breakdown; Dielectric loss measurement; Dielectric losses; Dielectrics and electrical insulation; Electronic packaging thermal management; Insulated gate bipolar transistors; Mechanical factors; Power electronics; Temperature; Voltage;
Conference_Titel :
Electrical Insulation and Dielectric Phenomena, 2006 IEEE Conference on
Conference_Location :
Kansas City, MO
Print_ISBN :
1-4244-0547-5
Electronic_ISBN :
1-4244-0547-5
DOI :
10.1109/CEIDP.2006.311989
