Title :
Microwave dynamics in nanoscale multilayer CPP devices driven by spin-transfer torque
Author :
Kiselev, S.I. ; Sankey, J.C. ; Krivorotov, I.N. ; Emley, N.C. ; Buhrman, R.A. ; Ralph, D.C.
Author_Institution :
Hitachi GST, San Jose, CA, USA
Abstract :
Nanopillar devices with an elliptical cross-section of about 130 nm × 70 nm were studied. The devices were made by ion milling of a sputtered multilayer Cu 80 nm/Py 20 nm/Cu 6 nm/Py 2 nm/Cu 2 nm/Pt 30 nm (Py=Ni80Fe20) followed by planarization with silicon oxide and the deposition of a Cu top contact. Current is applied perpendicular to the sample layers. We used Py magnetic layers due to its low magnetocrystalline anisotropy and small magnetostriction. As compared to previous studies of Co samples, the small magnetic moment of Py leads to smaller critical currents Ic for switching or excitation of dynamical states and smaller coercive magnetic fields Hc. This allows us to study nanopillar devices over an effectively larger range of current and field than in previous experiments.
Keywords :
coercive force; copper; ferromagnetic materials; iron alloys; magnetic anisotropy; magnetic microwave devices; magnetic moments; magnetic multilayers; magnetostriction; milling; nanostructured materials; nanotechnology; nickel alloys; planarisation; platinum; spin dynamics; spin polarised transport; 2 nm; 20 nm; 30 nm; 6 nm; 80 nm; Cu-Ni80Fe20-Cu-Ni80Fe20-Cu-Pt; coercive magnetic field; critical currents; dynamical state excitation; dynamical state switching; elliptical cross-section; ion milling; magnetic layers; magnetic moment; magnetocrystalline anisotropy; microwave dynamics; nanopillar devices; nanoscale multilayer CPP devices; planarization; small magnetostriction; spin-transfer torque; sputtered multilayer; top contact deposition; Iron; Magnetic anisotropy; Magnetostriction; Microwave devices; Milling; Nanoscale devices; Nonhomogeneous media; Perpendicular magnetic anisotropy; Planarization; Torque;
Conference_Titel :
Magnetics Conference, 2005. INTERMAG Asia 2005. Digests of the IEEE International
Print_ISBN :
0-7803-9009-1
DOI :
10.1109/INTMAG.2005.1463429