Study of vacuum-sealed carbon nanotube field emission display using vacuum micro electron source based on planar gate structure

Author

Huang, J.X. ; Xu, N.S. ; Deng, S.Z. ; Chen, Jun

Author_Institution

State Key Lab. of Optoelectron. Mater. & Technol., Sun Yat-sen Univ., Guangzhou, China

fYear

2009

fDate

20-24 July 2009

Firstpage

173

Lastpage

174

Abstract

In this paper, the fabrication of a planar gate field emission display (FED) is studied. In this structure, the carbon nanotubes (CNTs) are confined by insulated layer which helps to reduce the possibility of shorting between CNTs and gate electrodes. Transmission electron microscopy (TEM) is used to study the structure of the CNTs. The cathode current vs. gate voltage characteristics of the fabricated vacuum-scaled planar gate CNT-FED were measured.

Keywords

carbon nanotubes; field emission displays; nanotube devices; transmission electron microscopy; C; TEM; cathode current; gate electrodes; gate voltage characteristics; insulated layer; planar gate FED; planar gate structure; transmission electron microscopy; vacuum micro electron source; vacuum-sealed carbon nanotube field emission display; Argon; Carbon nanotubes; Cathodes; Electrodes; Electron sources; Fabrication; Flat panel displays; Insulation; Organic materials; Vacuum technology;

fLanguage

English

Publisher

ieee

Conference_Titel

Vacuum Nanoelectronics Conference, 2009. IVNC 2009. 22nd International

Conference_Location

Shizuoka

Print_ISBN

978-1-4244-3587-6

Electronic_ISBN

978-1-4244-3588-3

Type

conf

DOI

10.1109/IVNC.2009.5271595

Filename

5271595